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MJE13005-Q - NPN SILICON TRANSISTOR

Description

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

They are particularly suited for 115 and 220 V SWITCHMODE.

Features

  • S.
  • VCEO(SUS)= 400 V.
  • Reverse bias SOA with inductive loads @ TC = 100°С.
  • Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ).
  • 700V blocking capability.
  • SOA and switching.

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UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.
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