CHA3514 - GaAs Monolithic Microwave

United Monolithic Semiconductors

Datasheet Details

Part number	CHA3514
Manufacturer	United Monolithic Semiconductors
File Size	260.77 KB
Description	GaAs Monolithic Microwave
Datasheet	CHA3514-UnitedMonolithicSemiconductors.pdf

The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator.

Performances: 6-18GHz.
19dBm saturated output power.
13 dB gain.
4bit attenuator for 39.5dB dynamic range.
DC power consumption, 190mA @ 4.5V.
Chip size: 5.54 x 2.30 x 0.1mm Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 13 dB Psat Saturated Output power @ Attenuator state 0dB 19 dBm ATT dy.

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Published: Mar 4, 2016 |