Datasheet4U Logo Datasheet4U.com

CHA3513 Datasheet GaAs Monolithic Microwave

Manufacturer: United Monolithic Semiconductors

📥 Download Datasheet

Datasheet Details

Part number CHA3513
Manufacturer United Monolithic Semiconductors
File Size 199.06 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA3513 Datasheet

General Description

The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

Overview

CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave.

Key Features

  • Performances: 6-18GHz.
  • 20dBm saturated output power.
  • 19 dB gain.
  • 3 bit attenuator for 26dB range.
  • DC power consumption, 300mA @ 4.5V.
  • Chip size: 6.68 x 2.46 x 0.1mm 0dB state 5dB state 10dB state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 19 dB Psat Saturated Output power @ Attenuator state 0dB 20 dBm ATT dyn Attenuator range with 3bit 25 dB.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA3513-99F 3-bit Digital Variable Amplifier
CHA3511 GaAs Monolithic Microwave
CHA3511-99F Amplifier
CHA3512 GaAs Monolithic Microwave
CHA3512-99F Low Noise Digital Variable Amplifier
CHA3514 GaAs Monolithic Microwave
CHA3514-99F 4-bit Digital Variable Amplifier
CHA3565-QAG 5-21GHz Driver Amplifier
CHA3023 1-18 GHz WIDE BAND AMPLIFIER
CHA3023-99F WIDE BAND AMPLIFIER