CHA3565-QAG Key Features
- Broadband performances: 5-21GHz
- 20.5dBm saturated output power
- 15dB gain
- DC bias: Vd=5Volt @ Id=120mA
- 16L-QFN3x3
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- France Tel.: +33 (0) 1 69 86 32 00
- Part: CHA3565-QAG
- Manufacturer: United Monolithic Semiconductors
- Size: 620.19 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA3511 | GaAs Monolithic Microwave |
| CHA3511-99F | Amplifier |
| CHA3512 | GaAs Monolithic Microwave |
| CHA3512-99F | Low Noise Digital Variable Amplifier |
| CHA3513 | GaAs Monolithic Microwave |
CHA3565-QAG Description
The CHA3565-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.