• Part: CHA3666-FAA
  • Manufacturer: United Monolithic Semiconductors
  • Size: 468.73 KB
Download CHA3666-FAA Datasheet PDF
CHA3666-FAA datasheet preview
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CHA3666-FAA Key Features

  • Broadband performance 6-16GHz
  • 1.8dB typical Noise Figure
  • 24dBm 3rd order intercept point
  • 16dBm power at 1dB pression
  • 21dB gain
  • Low DC power consumption
  • 6x6mm² metal ceramic hermetic package
  • 21 Dec 12
  • Parc SILIC
  • 10, Avenue du Québec

Related United Monolithic Semiconductors Datasheets

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CHA3666 GaAs Monolithic Microwave
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CHA3664-QAG 5-21GHz Driver Amplifier

CHA3666-FAA Description

The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.