CHA3689-99F Datasheet (Low Noise Amplifier) | United Monolithic Semiconductors

Part: CHA3689-99F
Manufacturer: United Monolithic Semiconductors
Size: 865.72 KB

CHA3689-99F Key Features

Broadband performance: 12.5-30GHz
2.0dB noise figure
26dB gain (12.5-26GHz)
26dBm output IP3 (18-30GHz)
Low DC power consumption
DC bias: Vd=4 Volt @ Id= 90 /120mA
Chip size : 2.45 x 1.21 x 0.1mm
27 Oct 20
Parc Mosaic
10, Avenue du Québec

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CHA3689-99F Description

The CHA3689-99F is a three-stage self biased wide band monolithic low noise Vd1 Vd2 amplifier. RFin It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and B electron beam gate lithography.