CHA5012 Datasheet X Band Driver Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC.

Datasheet Details

Part number	CHA5012
Manufacturer	United Monolithic Semiconductors
File Size	532.81 KB
Description	X Band Driver Amplifier
Datasheet	CHA5012_UnitedMonolithicSemiconductors.pdf

General Description

The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications.

This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges.

A nitride layer protects the transistors and the passive components.

Key Features

Frequency band : 9.2-10.8 GHz.
Pout @3dB Gain compression : 29.5 dBm.
P. A. E @3dB Gain Compression : 40 %.
Two biasing modes:.
Digital control thanks to TTL interface.
Analog control thanks to biasing circuit.
Chip size: 2.87 x 1.47 x 0.1 mm3 Pout & PAE @ 3dB gain compression and Linear Gain (Temperature 25° C) Main Characteristics Tamb = +25° C, Vc = +7.5V (Pulse 100µs 20%) Symbol Fop G P3dB Icq Parameter Operating frequency range Small signal gain O.

CHA5012 Distributor & Price

Compare CHA5012 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from United Monolithic Semiconductors

Part Number	Description
CHA5010B	X Band Driver Amplifier
CHA5014-99F	X Band HBT Driver Amplifier
CHA5042	13-16GHz High Power Amplifier
CHA5050-99F	17-26GHz Medium Power Amplifier
CHA5050-QDG	17-24GHz Medium Power Amplifier
CHA5093	22-26GHz High Power Amplifier
CHA5093TCF	24-26GHz High Power Amplifier
CHA5115-99F	X-band Medium Power Amplifier
CHA5115-QDG	X-band Medium Power Amplifier
CHA5215A	5.8GHz Medium Power Amplifier