CHA5010B Datasheet X Band Driver Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC.

Datasheet Details

Part number	CHA5010B
Manufacturer	United Monolithic Semiconductors
File Size	51.84 KB
Description	X Band Driver Amplifier
Datasheet	CHA5010B_UnitedMonolithicSemiconductors.pdf

This CHA5010b is a two-stage monolithic driver amplifier.

The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

It is available in chip form.

¦ Broadband performance : 9-10.5GHz ¦ 27dBm output power (pulsed meas. , -1dB gain compression) ¦ 15dB gain ¦ ± 1.5dB gain flatness ¦ Chip size : 2,09 x 1,27 x 0.10 mm IN Vd OUT Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Pout Small signal gain Output power (Pulsed meas. , Pin = +13dBm) Min Typ Max Unit 9 10.5 GHz 14 15 dB 26 27 dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA50100096 -.

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