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CHA5010B - X Band Driver Amplifier

Datasheet Summary

Description

This CHA5010b is a two-stage monolithic driver amplifier.

The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

It is available in chip form.

Features

  • ¦ Broadband performance : 9-10.5GHz ¦ 27dBm output power (pulsed meas. , -1dB gain compression) ¦ 15dB gain ¦ ± 1.5dB gain flatness ¦ Chip size : 2,09 x 1,27 x 0.10 mm IN Vd OUT Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Pout Small signal gain Output power (Pulsed meas. , Pin = +13dBm) Min Typ Max Unit 9 10.5 GHz 14 15 dB 26 27 dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA50100096 -.

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Datasheet Details

Part number CHA5010B
Manufacturer United Monolithic Semiconductors
File Size 51.84 KB
Description X Band Driver Amplifier
Datasheet download datasheet CHA5010B Datasheet
Additional preview pages of the CHA5010B datasheet.

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Full PDF Text Transcription

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CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg Main Features ¦ Broadband performance : 9-10.5GHz ¦ 27dBm output power (pulsed meas., -1dB gain compression) ¦ 15dB gain ¦ ± 1.5dB gain flatness ¦ Chip size : 2,09 x 1,27 x 0.10 mm IN Vd OUT Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Pout Small signal gain Output power (Pulsed meas., Pin = +13dBm) Min Typ Max Unit 9 10.5 GHz 14 15 dB 26 27 dBm ESD Protection : Electrostatic discharge sensitive device.
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