CHA5012 Description
The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive ponents.
CHA5012 Key Features
- Frequency band : 9.2-10.8 GHz
- Pout @3dB Gain pression : 29.5 dBm
- P.A.E @3dB Gain pression : 40 %
- Two biasing modes
- Digital control thanks to TTL interface
- Analog control thanks to biasing circuit
- Chip size: 2.87 x 1.47 x 0.1 mm3
- 28 Jun 10 1/10 Specifications subject to change without notice
- B.P.46
- Fax : +33 (0)1 69 33 03 09