Datasheet Details
| Part number | CHA5012 |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 532.81 KB |
| Description | X Band Driver Amplifier |
| Datasheet |
 CHA5012 Datasheet
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General Description
The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications.
This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges.
A nitride layer protects the transistors and the passive components.
Key Features
- Frequency band : 9.2-10.8 GHz.
- Pout @3dB Gain compression : 29.5 dBm.
- P. A. E @3dB Gain Compression : 40 %.
- Two biasing modes:.
- Digital control thanks to TTL interface.
- Analog control thanks to biasing circuit.
- Chip size: 2.87 x 1.47 x 0.1 mm3 Pout & PAE @ 3dB gain compression and Linear Gain (Temperature 25° C) Main Characteristics Tamb = +25° C, Vc = +7.5V (Pulse 100µs 20%) Symbol Fop G P3dB Icq Parameter Operating frequency range Small signal gain O.