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CHA5012 - X Band Driver Amplifier

Datasheet Summary

Description

The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications.

This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges.

A nitride layer protects the transistors and the passive components.

Features

  • Frequency band : 9.2-10.8 GHz.
  • Pout @3dB Gain compression : 29.5 dBm.
  • P. A. E @3dB Gain Compression : 40 %.
  • Two biasing modes:.
  • Digital control thanks to TTL interface.
  • Analog control thanks to biasing circuit.
  • Chip size: 2.87 x 1.47 x 0.1 mm3 Pout & PAE @ 3dB gain compression and Linear Gain (Temperature 25° C) Main Characteristics Tamb = +25° C, Vc = +7.5V (Pulse 100µs 20%) Symbol Fop G P3dB Icq Parameter Operating frequency range Small signal gain O.

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Datasheet Details

Part number CHA5012
Manufacturer United Monolithic Semiconductors
File Size 532.81 KB
Description X Band Driver Amplifier
Datasheet download datasheet CHA5012 Datasheet
Additional preview pages of the CHA5012 datasheet.

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Full PDF Text Transcription

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CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Main Features ■ Frequency band : 9.2-10.8 GHz ■ Pout @3dB Gain compression : 29.5 dBm ■ P.A.
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