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CHA5050-99F Datasheet 17-26ghz Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5050-99F 17-26GHz Medium Power Amplifier GaAs Monolithic Microwave.

General Description

The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5dBm of output power associated to 20% of power added efficiency at 3dB gain pression.

It is designed for a wide range of applications, from military to mercial munication systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  •  0.25µm Power pHEMT Technology  Frequency band: 17-26GHz  Output power: 25.5dBm @ 3dBcomp  Linear gain: 22dB  Quiescent bias point: Vd=6V, Id=230 mA  Chip size: 2.38x1.14x0.07mm Main Electrical Characteristics Tamb =+25°C, Vd = 6V, Id (Quiescent) = 230 mA, CW mode. Symbol Parameter Freq Frequency range Gain Linear Gain Pout Output Power @1dB comp. Min Typ Max Unit 17.0 26.0 GHz 22.0 dB 25.0 dBm Ref. : DSCHA50502152 - 31 May 12 1/10 Specifications subject to change without not.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA5050-QDG 17-24GHz Medium Power Amplifier
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CHA5012 X Band Driver Amplifier
CHA5014-99F X Band HBT Driver Amplifier
CHA5042 13-16GHz High Power Amplifier
CHA5093 22-26GHz High Power Amplifier
CHA5093TCF 24-26GHz High Power Amplifier
CHA5115-99F X-band Medium Power Amplifier
CHA5115-QDG X-band Medium Power Amplifier
CHA5215A 5.8GHz Medium Power Amplifier

CHA5050-99F Distributor