CHA5050-99F Datasheet | United Monolithic Semiconductors

17-26GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5dBm of output power associated to 20% of power added efficiency at 3dB gain pression. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features  0.25µm Power pHEMT Technology  Frequency band: 17-26GHz  Output power: 25.5dBm @ 3dBp  Linear gain: 22dB  Quiescent bias point: Vd=6V, Id=230 mA...