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CHA5050-QDG - 17-24GHz Medium Power Amplifier

General Description

The CHA5050-QDG is a medium power amplifier four stages monolithic circuit.

It is designed for a wide range of applications, from military to commercial communication systems.

Key Features

  • Broadband performances: 17-24GHz.
  • 22dB Linear Gain.
  • 25dBm Pout @ 1dB comp.
  • 30dBm Output IP3.
  • DC bias: Vd=6.0Volt@Id=230mA.
  • 24L-QFN4x4.
  • MSL1 Main Electrical Characteristics Tamb. = +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V, Id = 230mA Symbol Parameter Min Typ Max Unit Freq Frequency range 17 24 GHz Gain Linear Gain 22 dB P1dB Output power @ 1dB compression 25 dBm Psat Saturated output power 26 dBm OIP3 Output IP3 30 dBm Ref. : DSCHA5050QDG1216 - 0.

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Datasheet Details

Part number CHA5050-QDG
Manufacturer United Monolithic Semiconductors
File Size 625.16 KB
Description 17-24GHz Medium Power Amplifier
Datasheet download datasheet CHA5050-QDG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA5050-QDG RoHS COMPLIANT 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5050-QDG is a medium power amplifier four stages monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UUMMSS AA3560685780A YYYYWWWWG Main Features ■ Broadband performances: 17-24GHz ■ 22dB Linear Gain ■ 25dBm Pout @ 1dB comp ■ 30dBm Output IP3 ■ DC bias: Vd=6.0Volt@Id=230mA ■ 24L-QFN4x4 ■ MSL1 Main Electrical Characteristics Tamb.= +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.