Datasheet4U Logo Datasheet4U.com

CHA5050-QDG Datasheet 17-24ghz Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5050-QDG RoHS PLIANT 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless.

General Description

The CHA5050-QDG is a medium power amplifier four stages monolithic circuit.

It is designed for a wide range of applications, from military to mercial munication systems.

The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performances: 17-24GHz.
  • 22dB Linear Gain.
  • 25dBm Pout @ 1dB comp.
  • 30dBm Output IP3.
  • DC bias: Vd=6.0Volt@Id=230mA.
  • 24L-QFN4x4.
  • MSL1 Main Electrical Characteristics Tamb. = +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V, Id = 230mA Symbol Parameter Min Typ Max Unit Freq Frequency range 17 24 GHz Gain Linear Gain 22 dB P1dB Output power @ 1dB compression 25 dBm Psat Saturated output power 26 dBm OIP3 Output IP3 30 dBm Ref. : DSCHA5050QDG1216 - 0.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA5050-99F 17-26GHz Medium Power Amplifier
CHA5010B X Band Driver Amplifier
CHA5012 X Band Driver Amplifier
CHA5014-99F X Band HBT Driver Amplifier
CHA5042 13-16GHz High Power Amplifier
CHA5093 22-26GHz High Power Amplifier
CHA5093TCF 24-26GHz High Power Amplifier
CHA5115-99F X-band Medium Power Amplifier
CHA5115-QDG X-band Medium Power Amplifier
CHA5215A 5.8GHz Medium Power Amplifier

CHA5050-QDG Distributor