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CHA5014-99F

Manufacturer: United Monolithic Semiconductors

CHA5014-99F datasheet by United Monolithic Semiconductors.

CHA5014-99F datasheet preview

CHA5014-99F Datasheet Details

Part number CHA5014-99F
Datasheet CHA5014-99F-UnitedMonolithicSemiconductors.pdf
File Size 643.37 KB
Manufacturer United Monolithic Semiconductors
Description X Band HBT Driver Amplifier
CHA5014-99F page 2 CHA5014-99F page 3

CHA5014-99F Overview

The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.

CHA5014-99F Key Features

  • 30dBm Saturated output power
  • Temperature pensated Output power
  • Two biasing modes
  • Digital control thanks to TTL interface
  • Analog control thanks to Biasing circuit
  • Quiescent bias point: 8.5V@230mA
  • Chip size: 2.87 x 1.37 x 0.1mm3
  • 27 Oct 20
  • Parc Mosaic
  • 10, Avenue du Québec
United Monolithic Semiconductors logo - Manufacturer

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CHA5014-99F Distributor

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