Datasheet4U Logo Datasheet4U.com

CHA5014-99F - X Band HBT Driver Amplifier

General Description

The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications.

Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature.

Key Features

  • 30dBm Saturated output power.
  • Temperature compensated Output power.
  • Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to Biasing circuit.
  • Quiescent bias point: 8.5V@230mA.
  • Chip size: 2.87 x 1.37 x 0.1mm3 Pout & PAE @ 1dBc and Linear Gain (Tamb 20°C) Main Characteristics Tamb = +20°C, Vc = +8.5V (Pulse 100µs 20%) Symbol Parameter Min Typ Max Fop Operating frequency range 8.5 11 G Small signal gain 20 P1dB Output power at 1d.

📥 Download Datasheet

Datasheet Details

Part number CHA5014-99F
Manufacturer United Monolithic Semiconductors
File Size 643.37 KB
Description X Band HBT Driver Amplifier
Datasheet download datasheet CHA5014-99F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA5014-99F X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. A special control circuit is implemented to stabilize the output power in temperature. Main Features ■ 30dBm Saturated output power ■ Temperature compensated Output power ■ Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to Biasing circuit ■ Quiescent bias point: 8.