CHA5014-99F Datasheet PDF - United Monolithic Semiconductors X Band HBT Driver Amplifier Specs

CHA5014-99F - X Band HBT Driver Amplifier

Datasheet Summary

Description

The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications.

Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature.

Features

30dBm Saturated output power.
Temperature compensated Output power.
Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to Biasing circuit.
Quiescent bias point: 8.5V@230mA.
Chip size: 2.87 x 1.37 x 0.1mm3 Pout & PAE @ 1dBc and Linear Gain (Tamb 20°C) Main Characteristics Tamb = +20°C, Vc = +8.5V (Pulse 100µs 20%) Symbol Parameter Min Typ Max Fop Operating frequency range 8.5 11 G Small signal gain 20 P1dB Output power at 1d.

Datasheet Details

Part number	CHA5014-99F
Manufacturer	United Monolithic Semiconductors
File Size	643.37 KB
Description	X Band HBT Driver Amplifier
Datasheet	CHA5014-99F Datasheet
Additional preview pages of the CHA5014-99F datasheet.

📁 Similar Datasheet

CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)

CHA441 - Hall-effect sensor (Cosemitech)

Full PDF Text Transcription

Click to expand full text

CHA5014-99F X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. A special control circuit is implemented to stabilize the output power in temperature. Main Features ■ 30dBm Saturated output power ■ Temperature compensated Output power ■ Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to Biasing circuit ■ Quiescent bias point: 8.

Published: Feb 2, 2016 |