CHA5014-99F Datasheet X Band Hbt Driver Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5014-99F X Band HBT Driver Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA5014-99F
Manufacturer	United Monolithic Semiconductors
File Size	643.37 KB
Description	X Band HBT Driver Amplifier
Datasheet	CHA5014-99F-UnitedMonolithicSemiconductors.pdf

The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications.

Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature.

This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.

30dBm Saturated output power.
Temperature compensated Output power.
Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to Biasing circuit.
Quiescent bias point: 8.5V@230mA.
Chip size: 2.87 x 1.37 x 0.1mm3 Pout & PAE @ 1dBc and Linear Gain (Tamb 20°C) Main Characteristics Tamb = +20°C, Vc = +8.5V (Pulse 100µs 20%) Symbol Parameter Min Typ Max Fop Operating frequency range 8.5 11 G Small signal gain 20 P1dB Output power at 1d.

Part Number	Description
CHA5010B	X Band Driver Amplifier
CHA5012	X Band Driver Amplifier
CHA5042	13-16GHz High Power Amplifier
CHA5050-99F	17-26GHz Medium Power Amplifier
CHA5050-QDG	17-24GHz Medium Power Amplifier
CHA5093	22-26GHz High Power Amplifier
CHA5093TCF	24-26GHz High Power Amplifier
CHA5115-99F	X-band Medium Power Amplifier
CHA5115-QDG	X-band Medium Power Amplifier
CHA5215A	5.8GHz Medium Power Amplifier