CHA5050-QDG Key Features
- Broadband performances: 17-24GHz
- 22dB Linear Gain
- 25dBm Pout @ 1dB p
- 30dBm Output IP3
- DC bias: Vd=6.0Volt@Id=230mA
- 24L-QFN4x4
- 04 Aug 11
- 91401 Orsay Cedex France
- Fax: +33 (0) 1 69 33 03 09
- Part: CHA5050-QDG
- Manufacturer: United Monolithic Semiconductors
- Size: 625.16 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA5050-99F | 17-26GHz Medium Power Amplifier |
| CHA5010B | X Band Driver Amplifier |
| CHA5012 | X Band Driver Amplifier |
| CHA5014-99F | X Band HBT Driver Amplifier |
| CHA5042 | 13-16GHz High Power Amplifier |
CHA5050-QDG Description
The CHA5050-QDG is a medium power amplifier four stages monolithic circuit. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.