CHA5115-99F - X-band Medium Power Amplifier

United Monolithic Semiconductors

Datasheet Details

Part number	CHA5115-99F
Manufacturer	United Monolithic Semiconductors
File Size	311.15 KB
Description	X-band Medium Power Amplifier
Datasheet	CHA5115-99F-UnitedMonolithicSemiconductors.pdf

The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.

 0.25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.  Quiescent bias point: Vd=8V, Id=0.19A  Chip size: 2.37x1.82x0.07mm Pout (dBm) & PAE(%) & Gain(dB) 44 PAE @ 3dB comp 42 40 38 36 34 32 Pout @ 3dB comp 30 28 26 Linear Gain 24 22 20 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Main Characteristics Tamb =+25°C, Vd =8V, Id (Quiescent) =190mA, Drain Pulse wid.

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Published: Feb 2, 2016 |