• Part: CHA6517
  • Description: 6 - 18 GHz High Power Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 460.75 KB
Download CHA6517 Datasheet PDF
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Datasheet Summary

.. RoHS PLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: - the backside of the chip is both RF and DC grounded - bond pads and back side are gold plated for patibility with eutectic die attach method and thermosonic or thermopression bonding process. Output Power versus Frequency Vg Vd3 Main Features 0.25 µm Power pHEMT Technology 6 - 18 GHz...