CHA6517 Datasheet 6 - 18 GHz High Power Amplifier

Manufacturer: United Monolithic Semiconductors

CHA6517 6 - 18 ghz high power amplifier by United Monolithic Semiconductors - Datasheet Preview

Datasheet Details

Part number	CHA6517
Manufacturer	United Monolithic Semiconductors
File Size	460.75 KB
Description	6 - 18 GHz High Power Amplifier
Download	CHA6517 Download (PDF)

General Description

The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications.

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges.

To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.

Overview

www.DataSheet4U.com CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave.

Key Features

0.25 µm Power pHEMT Technology 6.
18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm INPUT A OUTPUT A Vd1 Vd2 Vd3 INPUT B OUTPUT B Vg Vd3 Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Symbol F_op Psat G_lin Parameter Operating frequency range Saturated output power Linear gain Min 6 30 19 32 22 Typ Max 18 Unit GHz dBm.

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