CHA6551-99F Datasheet | United Monolithic Semiconductors

17-24GHz Power Amplifier GaAs Monolithic Microwave IC Description The CHA6551-99F is a three stage monolithic GaAs high power circuit producing 1.6 Watt output power. It is highly linear, with possible gain control RFIN and integrates a power detector. ESD protections are included. It is designed for a wide range of applications: Space, military and automotive munication systems The circuit is manufactured with a pHEMT process, 0.15µm gate length. Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 RFOUT Main Features - Broadband performances: 17-24GHz - 32dBm saturated power - 39dBm OIP3 - 22dB Gain - DC bias: Vd = 4.0 Volt @ Id = 880mA - Chip size...