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CHA6551-99F Datasheet 17-24ghz Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA6551-99F 17-24GHz Power Amplifier GaAs Monolithic Microwave.

General Description

The CHA6551-99F is a three stage monolithic GaAs high power circuit producing 1.6 Watt output power.

It is highly linear, with possible gain control RFIN and integrates a power detector.

ESD protections are included.

Key Features

  • Broadband performances: 17-24GHz.
  • 32dBm saturated power.
  • 39dBm OIP3.
  • 22dB Gain.
  • DC bias: Vd = 4.0 Volt @ Id = 880mA.
  • Chip size 3.60x3.46x0.07mm Output Power & PAE vs frequency Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 17 24 GHz 22 dB 32 dBm 39 dBm Ref. : DSCHA65510301 - 27 Oct 20 1/18 Specifications subject to change without no.

CHA6551-99F Distributor