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CHA6517 - 6 - 18 GHz High Power Amplifier

General Description

The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications.

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges.

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Key Features

  • 0.25 µm Power pHEMT Technology 6.
  • 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm INPUT A OUTPUT A Vd1 Vd2 Vd3 INPUT B OUTPUT B Vg Vd3 Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Symbol F_op Psat G_lin Parameter Operating frequency range Saturated output power Linear gain Min 6 30 19 32 22 Typ Max 18 Unit GHz dBm.

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Datasheet Details

Part number CHA6517
Manufacturer United Monolithic Semiconductors
File Size 460.75 KB
Description 6 - 18 GHz High Power Amplifier
Datasheet download datasheet CHA6517 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Output Power versus Frequency Vg Vd3 Main Features 0.