Datasheet4U Logo Datasheet4U.com

CHA6517 Datasheet 6 - 18 Ghz High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: .. CHA6517 RoHS PLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave.

General Description

The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications.

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges.

To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for patibility with eutectic die attach method and thermosonic or thermopression bonding process.

Key Features

  • 0.25 µm Power pHEMT Technology 6.
  • 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm INPUT A OUTPUT A Vd1 Vd2 Vd3 INPUT B OUTPUT B Vg Vd3 Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Symbol F_op Psat G_lin Parameter Operating frequency range Saturated output power Linear gain Min 6 30 19 32 22 Typ Max 18 Unit GHz dBm.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA6518 5 - 18 GHz High Power Amplifier
CHA6550-98F Power Amplifier
CHA6550-QXG 17.0 - 23.6GHz Power Amplifier
CHA6551-99F 17-24GHz Power Amplifier
CHA6552-QJG GaAs Monolithic Microwave
CHA6558-99F four stages GaAs high power amplifier
CHA6005-99F High Power Amplifier
CHA6005-QEG High Power Amplifier
CHA6015-99F 2-8GHz High Power Amplifier
CHA6042 13-16GHz High Power Amplifier

CHA6517 Distributor