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CHA6552-QJG - GaAs Monolithic Microwave

Datasheet Summary

Description

4 Watt output power.

commercial communication systems.

Features

  • 40.
  • Broadband performances: 5.8- 8.5GHz 39.
  • 36dBm saturated power 38.
  • 35dBm at 1dB compression.
  • 22dB gain.
  • DC bias: Vd = 7.0Volt @ Id = 1.8A.
  • QFN6x6 UMS.
  • MSL3 37 36 35 34 33 32 31 30 5 Pout & PAE versus frequency P-1dB at 1.8 A Psat at 1.8 A PAE at 1.8A 6789 Frequency (GHz) 40 38 36 34 32 30 28 26 24 22 20 10 Pout (dBm) PAE at 1dB comp. ( %) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 5.8 8.

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Datasheet Details

Part number CHA6552-QJG
Manufacturer United Monolithic Semiconductors
File Size 625.57 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA6552-QJG Datasheet
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Full PDF Text Transcription

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CHA6552-QJG UMS A368687A YWWG UMS A368687A YWWG UMS A366878A YYWWG UMS A366878A YYWWG 5.8- 8.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6552-QJG is a three stage monolithic GaAs high power circuit producing YYWWG 4 Watt output power. UMS A366878A UMSUMS A366878AIt is designed for Point to Point radio and A6Y5Y52WWG commercial communication systems. YYWWGThe circuit is manufactured with a pHEMT YYWWAU36M6878SA process, 0.5µm gate length. SMU A786863A GWWYY SMU A786863A GWWYY It is supplied in RoHS compliant SMD package. Main Features 40 ■ Broadband performances: 5.8- 8.5GHz 39 ■ 36dBm saturated power 38 ■ 35dBm at 1dB compression ■ 22dB gain ■ DC bias: Vd = 7.0Volt @ Id = 1.
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