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CHA6558-99F - four stages GaAs high power amplifier

General Description

The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications.

The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems.

Key Features

  • Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm).
  • Broadband performances: 28-32GHz.
  • 21dB Linear Gain.
  • 33dBm output power @3dB compression.
  • 23% PAE@ 3dB compression.
  • DC bias: Vd=6Volt@Id=1.4A.
  • Chip size 3.46x2.71x0.07mm 39 37 35 33 31 29 27 25 Pout @Saturation PAE @Saturation 23 21 19 Linear Gain 17 15 28 29 30 Frequency (GHz) 31 32 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 28 32 GHz.

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Datasheet Details

Part number CHA6558-99F
Manufacturer United Monolithic Semiconductors
File Size 559.22 KB
Description four stages GaAs high power amplifier
Datasheet download datasheet CHA6558-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6558-99F RoHS COMPLIANT 28-32GHz HPA 2W GaAs Monolithic Microwave IC Description The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. D1 D2 D3 G3 RF IN G4 D4 RF OUT G2 G3 Main Features Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm) ■ Broadband performances: 28-32GHz ■ 21dB Linear Gain ■ 33dBm output power @3dB compression. ■ 23% PAE@ 3dB compression ■ DC bias: Vd=6Volt@Id=1.4A ■ Chip size 3.