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CHA6518 - 5 - 18 GHz High Power Amplifier

Datasheet Summary

Description

The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications.

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges.

the backside of the chip

Features

  • n n n n n n 0.25 µm Power pHEMT Technology 5.
  • 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT Vd Vg Vd Vg Vd Vd = 8 V Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Symbol Parameter F_op P_sat G_lin Operating frequency range Saturated output power Linear gain Min.

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Datasheet Details

Part number CHA6518
Manufacturer United Monolithic Semiconductors
File Size 353.03 KB
Description 5 - 18 GHz High Power Amplifier
Datasheet download datasheet CHA6518 Datasheet
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www.DataSheet4U.com CHA6518 RoHS COMPLIANT 5 – 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Vg Vg Vd Main Features n n n n n n 0.25 µm Power pHEMT Technology 5 – 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.
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