CHA6518 Datasheet 5 - 18 GHz High Power Amplifier

Manufacturer: United Monolithic Semiconductors

CHA6518 5 - 18 ghz high power amplifier by United Monolithic Semiconductors - Datasheet Preview

Datasheet Details

Part number	CHA6518
Manufacturer	United Monolithic Semiconductors
File Size	353.03 KB
Description	5 - 18 GHz High Power Amplifier
Download	CHA6518 Download (PDF)

General Description

The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications.

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges.

To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.

Overview

www.DataSheet4U.com CHA6518 RoHS COMPLIANT 5 – 18 GHz High Power Amplifier GaAs Monolithic Microwave.

Key Features

n n n n n n 0.25 µm Power pHEMT Technology 5.
18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT Vd Vg Vd Vg Vd Vd = 8 V Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Symbol Parameter F_op P_sat G_lin Operating frequency range Saturated output power Linear gain Min.

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