CHA6552-QJG Key Features
- Broadband performances: 5.8- 8.5GHz
- 36dBm saturated power
- 35dBm at 1dB pression
- 22dB gain
- DC bias: Vd = 7.0Volt @ Id = 1.8A
- QFN6x6
- 27 May 14
- Parc SILIC
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- Part: CHA6552-QJG
- Manufacturer: United Monolithic Semiconductors
- Size: 625.57 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA6550-98F | Power Amplifier |
| CHA6550-QXG | 17.0 - 23.6GHz Power Amplifier |
| CHA6551-99F | 17-24GHz Power Amplifier |
| CHA6558-99F | four stages GaAs high power amplifier |
| CHA6517 | 6 - 18 GHz High Power Amplifier |
CHA6552-QJG Description
The CHA6552-QJG is a three stage monolithic GaAs high power circuit producing YYWWG 4 Watt output power. UMS A366878A UMSUMS A366878AIt is designed for Point to Point radio and A6Y5Y52WWG mercial munication systems. YYWWGThe circuit is manufactured with a pHEMT YYWWAU36M6878SA process, 0.5µm gate length.