Datasheet4U Logo Datasheet4U.com

CHA6552-QJG Datasheet GaAs Monolithic Microwave

Manufacturer: United Monolithic Semiconductors

📥 Download Datasheet

Datasheet Details

Part number CHA6552-QJG
Manufacturer United Monolithic Semiconductors
File Size 625.57 KB
Description GaAs Monolithic Microwave
Download CHA6552-QJG Download (PDF)

General Description

The CHA6552-QJG is a three stage monolithic GaAs high power circuit producing YYWWG 4 Watt output power.

UMS A366878A UMSUMS A366878AIt is designed for Point to Point radio and A6Y5Y52WWG commercial communication systems.

YYWWGThe circuit is manufactured with a pHEMT YYWWAU36M6878SA process, 0.5µm gate length.

Overview

CHA6552-QJG UMS A368687A YWWG UMS A368687A YWWG UMS A366878A YYWWG UMS A366878A YYWWG 5.8- 8.

Key Features

  • 40.
  • Broadband performances: 5.8- 8.5GHz 39.
  • 36dBm saturated power 38.
  • 35dBm at 1dB compression.
  • 22dB gain.
  • DC bias: Vd = 7.0Volt @ Id = 1.8A.
  • QFN6x6 UMS.
  • MSL3 37 36 35 34 33 32 31 30 5 Pout & PAE versus frequency P-1dB at 1.8 A Psat at 1.8 A PAE at 1.8A 6789 Frequency (GHz) 40 38 36 34 32 30 28 26 24 22 20 10 Pout (dBm) PAE at 1dB comp. ( %) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 5.8 8.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA6550-98F Power Amplifier
CHA6550-QXG 17.0 - 23.6GHz Power Amplifier
CHA6551-99F 17-24GHz Power Amplifier
CHA6558-99F four stages GaAs high power amplifier
CHA6517 6 - 18 GHz High Power Amplifier
CHA6518 5 - 18 GHz High Power Amplifier
CHA6005-99F High Power Amplifier
CHA6005-QEG High Power Amplifier
CHA6015-99F 2-8GHz High Power Amplifier
CHA6042 13-16GHz High Power Amplifier