CHA6552-QJG - GaAs Monolithic Microwave

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA6552-QJG
Manufacturer	United Monolithic Semiconductors
File Size	625.57 KB
Description	GaAs Monolithic Microwave
Datasheet	CHA6552-QJG-UnitedMonolithicSemiconductors.pdf

CHA6552-QJG Product details

Description

The CHA6552-QJG is a three stage monolithic GaAs high power circuit producing YYWWG 4 Watt output power.UMS A366878A UMSUMS A366878AIt is designed for Point to Point radio and A6Y5Y52WWG commercial communication systems.YYWWGThe circuit is manufactured with a pHEMT YYWWAU36M6878SA process, 0.5µm gate length.SMU A786863A GWWYY SMU A786863A GWWYY It is supplied in RoHS compliant SMD package.Main

Features

40.
Broadband performances: 5.8- 8.5GHz 39.
36dBm saturated power 38.
35dBm at 1dB compression.
22dB gain.
DC bias: Vd = 7.0Volt @ Id = 1.8A.
QFN6x6 UMS.
MSL3 37 36 35 34 33 32 31 30 5 Pout & PAE versus frequency P-1dB at 1.8 A Psat at 1.8 A PAE at 1.8A 6789 Frequency (GHz) 40 38 36 34 32 30 28 26 24 22 20 10 Pout (dBm) PAE at 1dB comp. ( %) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 5.8 8.

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Published: Mar 4, 2016 |