CHA6558-99F Datasheet Four Stages Gaas High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA6558-99F RoHS COMPLIANT 28-32GHz HPA 2W GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA6558-99F
Manufacturer	United Monolithic Semiconductors
File Size	559.22 KB
Description	four stages GaAs high power amplifier
Datasheet	CHA6558-99F_UnitedMonolithicSemiconductors.pdf

General Description

The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications.

The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems.

It is developed on a robust 0.15µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm).
Broadband performances: 28-32GHz.
21dB Linear Gain.
33dBm output power @3dB compression.
23% PAE@ 3dB compression.
DC bias: Vd=6Volt@Id=1.4A.
Chip size 3.46x2.71x0.07mm 39 37 35 33 31 29 27 25 Pout @Saturation PAE @Saturation 23 21 19 Linear Gain 17 15 28 29 30 Frequency (GHz) 31 32 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 28 32 GHz.

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