• Part: CHA6664-QDG
  • Description: 12-16GHz 1W High Power Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 347.20 KB
Download CHA6664-QDG Datasheet PDF
CHA6664-QDG page 2
Page 2
CHA6664-QDG page 3
Page 3

CHA6664-QDG Key Features

  • 0.25 µm Power pHEMT Technology
  • 12-16 GHz Frequency Range
  • 31.5 dBm Saturated Output Power
  • High gain: 28dB
  • Quiescent Bias Point: 8V, 600mA
  • 24L-QFN4x4 SMD package
  • 28 Nov 06
  • Fax: +33 (0) 1 69 33 03 09
  • 16GHz) Linear gain variation versus temperature Input return loss ( 12
  • 16GHz) Output return loss Output power at 1dB gain pression Saturated Output power Power Added Effciency in saturation P