CHK8101a99F bar equivalent, 20w power bar.
* Wide band capability up to 6GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VDS up to 50V
* Chip size: 1.05x1..
such as radar and telecommunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is .
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. It is developed on a 0.5µm gate lengt.
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