CHK9014-99F transistor equivalent, 55w power transistor.
* Wide band capability up to 13GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VD up to 30V
* Chip size: 0.88x4..
such as radar and telecommunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC subs.
The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25.
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