• Part: CHK015A-QIA
  • Manufacturer: United Monolithic Semiconductors
  • Size: 625.69 KB
Download CHK015A-QIA Datasheet PDF
CHK015A-QIA datasheet preview
CHK015A-QIA page 2
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CHK015A-QIA page 3
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CHK015A-QIA Key Features

  • Wide band capability: up to 6GHz
  • Pulsed and CW operating modes
  • High power: > 15W
  • High Efficiency: up to 70%
  • DC bias: Vd=50Volt @ Id=100mA
  • Low cost package: 14L-DFN3x4
  • MTTF > 106 hours @ Tj=200°C
  • 23 Dec 15
  • Parc SILIC
  • 10, Avenue du Québec

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CHK015A-QIA Description

The CHK015A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telemunication.

CHK015A-QIA Applications

  • Wide band capability: up to 6GHz