Description
The CHK015A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
Features
- Wide band capability: up to 6GHz.
- Pulsed and CW operating modes.
- High power: > 15W.
- High Efficiency: up to 70%.
- DC bias: Vd=50Volt @ Id=100mA.
- Low cost package: 14L-DFN3x4.
- MTTF > 106 hours @ Tj=200°C
VDS = 50V, ID_Q = 100mA, Freq = 2.9GHz Pulsed mode (100µs, 10%)
Gain (dB), Pout (dBm) & PAE (%) Drain Current (A)
55 1.8
50 1.6
45 1.4
40 Pout 35
1.2 1
30 PAE 25 20 15
ID Gain
0.8 0.6 0.4 0.2
10 0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Input P.
CHK015A-QIA-UnitedMonolithicSemiconductors.pdf
