CHK8015-99F Datasheet 16w Power Transistor

Manufacturer: United Monolithic Semiconductors

Overview: CHK8015-99F 16W Power Transistor GaN HEMT on SiC.

Datasheet Details

Part number	CHK8015-99F
Manufacturer	United Monolithic Semiconductors
File Size	328.05 KB
Description	16W Power Transistor
Datasheet	CHK8015-99F-UnitedMonolithicSemiconductors.pdf

The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications.

The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.

Wide band capability up to 18GHz.
Pulsed and CW operating modes.
GaN technology: High Pout & High PAE.
DC bias: VD=30V @ID_Q=200mA.
Chip size 0.88x2x0.1mm.
RoHS N°2011/65.
REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA Symbol Parameter Min Typ GSS Small Signal Gain 17 PSAT Saturated Output Power 20 PAE Max Power Added Efficiency 68 GPAE_MAX Associated Gain at Max PAE 11 These value.