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CHK8015-99F - 16W Power Transistor

Datasheet Summary

Description

The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications.

The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.

Features

  • Wide band capability up to 18GHz.
  • Pulsed and CW operating modes.
  • GaN technology: High Pout & High PAE.
  • DC bias: VD=30V @ID_Q=200mA.
  • Chip size 0.88x2x0.1mm.
  • RoHS N°2011/65.
  • REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA Symbol Parameter Min Typ GSS Small Signal Gain 17 PSAT Saturated Output Power 20 PAE Max Power Added Efficiency 68 GPAE_MAX Associated Gain at Max PAE 11 These value.

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Datasheet Details

Part number CHK8015-99F
Manufacturer United Monolithic Semiconductors
File Size 328.05 KB
Description 16W Power Transistor
Datasheet download datasheet CHK8015-99F Datasheet
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CHK8015-99F 16W Power Transistor GaN HEMT on SiC Description The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die form and requires an external matching circuitry. Main Features ■ Wide band capability up to 18GHz ■ Pulsed and CW operating modes ■ GaN technology: High Pout & High PAE ■ DC bias: VD=30V @ID_Q=200mA ■ Chip size 0.88x2x0.
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