Description
The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor.
Features
- Wide band capability up to 10GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VD up to 30V.
- Chip size: 0.9x1.2x0.1mm.
- RoHS N°2011/65.
- REACh N°1907/2006
Main Electrical Characteristics
Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VDS = 30V, ID_Q = 0.18A
Symbol
Parameter
Min Typ
GSS
Small Signal Gain
17
PSAT
Saturated Output Power
14
PAE
Max Power Added Efficiency
70
GPAE_MAX Associated Gain at Max PAE
11
(1) Tb: C.
CHK8013-99F-UnitedMonolithicSemiconductors.pdf
