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CHK8013-99F Datasheet, Transistor, United Monolithic Semiconductors

CHK8013-99F Datasheet, Transistor, United Monolithic Semiconductors

CHK8013-99F

datasheet Download (Size : 867.54KB)

CHK8013-99F Datasheet
CHK8013-99F

datasheet Download (Size : 867.54KB)

CHK8013-99F Datasheet

CHK8013-99F Features and benefits

CHK8013-99F Features and benefits


* Wide band capability up to 10GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VD up to 30V
* Chip size: 0.9x1.2.

CHK8013-99F Application

CHK8013-99F Application

such as radar and telecommunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC subs.

CHK8013-99F Description

CHK8013-99F Description

The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25.

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TAGS

CHK8013-99F
14W
Power
Transistor
United Monolithic Semiconductors

Manufacturer


United Monolithic Semiconductors

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