Datasheet Details
| Part number | CHK8013-99F |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 867.54 KB |
| Description | 14W Power Transistor |
| Datasheet |
 CHK8013-99F Datasheet
|
|
|
General Description
The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.
Key Features
- Wide band capability up to 10GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VD up to 30V.
- Chip size: 0.9x1.2x0.1mm.
- RoHS N°2011/65.
- REACh N°1907/2006 Main Electrical Characteristics Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VDS = 30V, ID_Q = 0.18A Symbol Parameter Min Typ GSS Small Signal Gain 17 PSAT Saturated Output Power 14 PAE Max Power Added Efficiency 70 GPAE_MAX Associated Gain at Max PAE 11 (1) Tb: C.