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CHK015AaQIA 15W Power Packaged Transistor

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Description

CHK015AaQIA 15W Power Packaged Transistor GaN HEMT on SiC in SMD leadless package .
The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

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Features

* Wide band capability: up to 4GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VDS up to 50V
* Low cost package: 14L-DFN3x4
* MTTF > 106 hours @ Tj = 200°C
* RoHS N°2011/65
* REACh N°1907/2006 VDS = 50V, ID_Q = 75mA, Freq = 2.9GH

Applications

* It is well suited for multi-purpose applications such as radar and telecommunication. The CHK015AaQIA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in low cost plastic package providing low parasitic and low thermal resistance. UUM

CHK015AaQIA Distributors

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CHK0501 CHK0501A

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