CHK015AaQIA Datasheet - United Monolithic Semiconductors

CHK015AaQIA 15W Power Packaged Transistor

The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHK015AaQIA is developed on .

CHK015AaQIA Features

* Wide band capability: up to 4GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VDS up to 50V

* Low cost package: 14L-DFN3x4

* MTTF > 106 hours @ Tj = 200°C

* RoHS N°2011/65

* REACh N°1907/2006 VDS = 50V, ID_Q = 75mA, Freq = 2.9GH

CHK015AaQIA Datasheet (815.41 KB)

CHK015AaQIA Datasheet Preview — Preview of CHK015AaQIA PDF

Datasheet Details

Part number:

CHK015AaQIA

Manufacturer:

United Monolithic Semiconductors

File Size:

815.41 KB

Description:

15w power packaged transistor.

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CHK015AaQIA 15W Power Packaged Transistor United Monolithic Semiconductors

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