Description
The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
Features
- Wide band capability: up to 4GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VDS up to 50V.
- Low cost package: 14L-DFN3x4.
- MTTF > 106 hours @ Tj = 200°C.
- RoHS N°2011/65.
- REACh N°1907/2006
VDS = 50V, ID_Q = 75mA, Freq = 2.9GHz Pulsed mode (1ms, 10%)
55
1.8
PAE
50
1.6
45
Pout
1.4
40
1.2
35
1
ID
30
0.8
25
0.6
20
Gain 0.4
15
0.2
10
0
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Gain (dB), Pout (d.
CHK015AaQIA-UnitedMonolithicSemiconductors.pdf
