CHK8015-99F Datasheet - United Monolithic Semiconductors

CHK8015-99F 16W Power Transistor

The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die fo.

CHK8015-99F Features

* Wide band capability up to 18GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VD=30V @ID_Q=200mA

* Chip size 0.88x2x0.1mm

* RoHS N°2011/65

* REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS

CHK8015-99F-UnitedMonolithicSemiconductors.pdf

CHK8015-99F Datasheet Preview — Preview of CHK8015-99F PDF

Datasheet Details

Part number:

CHK8015-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

328.05 KB

Description:

16w power transistor.

📁 Related Datasheet

CHK8013-99F 14W Power Transistor (United Monolithic Semiconductors)

CHK8101a99F 20W Power Bar (United Monolithic Semiconductors)

CHK015A-QIA 15W Power Packaged Transistor (United Monolithic Semiconductors)

CHK015AaQIA 15W Power Packaged Transistor (United Monolithic Semiconductors)

CHK0501 Li-ion battery charging chip (CHK)

CHK0501 Rechargeable lithium-chip IT (Infinitrue)

CHK0501A Li-ion battery charging chip (CHK)

CHK9014-99F 55W Power Transistor (United Monolithic Semiconductors)

TAGS

CHK8015-99F CHK8015-99F 16W Power Transistor United Monolithic Semiconductors

CHK8015-99F Distributor