CHK8015-99F 16W Power Transistor

United Monolithic Semiconductors

Description

CHK8015-99F 16W Power Transistor GaN HEMT on SiC .
The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor.

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Datasheet Specifications

Part number: CHK8015-99F
Manufacturer: United Monolithic Semiconductors
File Size: 328.05 KB
Datasheet: CHK8015-99F-UnitedMonolithicSemiconductors.pdf
Description: 16W Power Transistor

Features

* Wide band capability up to 18GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VD=30V @ID_Q=200mA
* Chip size 0.88x2x0.1mm
* RoHS N°2011/65
* REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS

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CHK8015-99F 16W Power Transistor United Monolithic Semiconductors

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