CHK8015-99F Datasheet (United Monolithic Semiconductors)

CHK8015-99F, 16W Power Transistor

The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications.

The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.

It is proposed in a bare die fo

CHK8015-99F Features

* Wide band capability up to 18GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VD=30V @ID_Q=200mA

* Chip size 0.88x2x0.1mm

* RoHS N°2011/65

* REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS