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CHK015A-QIA 15W Power Packaged Transistor

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Description

CHK015A-QIA 15W Power Packaged Transistor GaN HEMT on SiC .
The CHK015A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

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Features

* Wide band capability: up to 6GHz
* Pulsed and CW operating modes
* High power: > 15W
* High Efficiency: up to 70%
* DC bias: Vd=50Volt @ Id=100mA
* Low cost package: 14L-DFN3x4
* MTTF > 106 hours @ Tj=200°C VDS = 50V, ID_Q = 100mA, Freq = 2.9GHz Pulsed mode (100µs, 10%

Applications

* It is well suited for multi-purpose applications such as radar and telecommunication. The CHK015A-QIA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in low cost plastic package providing low parasitic and low thermal resistance. Mai

CHK015A-QIA Distributors

📁 Related Datasheet

CHK0501 CHK0501A

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