CHK8013-99F Datasheet (United Monolithic Semiconductors)

CHK8013-99F, 14W Power Transistor

The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.

The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrat

CHK8013-99F Features

* Wide band capability up to 10GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VD up to 30V

* Chip size: 0.9x1.2x0.1mm

* RoHS N°2011/65

* REACh N°1907/2006 Main Electrical Characteristics Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VD