CHK8013-99F 14W Power Transistor

United Monolithic Semiconductors

Description

CHK8013-99F 14W Power Transistor GaN HEMT on SiC .
The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor.

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Datasheet Specifications

Part number: CHK8013-99F
Manufacturer: United Monolithic Semiconductors
File Size: 867.54 KB
Datasheet: CHK8013-99F-UnitedMonolithicSemiconductors.pdf
Description: 14W Power Transistor

Features

* Wide band capability up to 10GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VD up to 30V
* Chip size: 0.9x1.2x0.1mm
* RoHS N°2011/65
* REACh N°1907/2006 Main Electrical Characteristics Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VD

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CHK8013-99F 14W Power Transistor United Monolithic Semiconductors

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