CHK8013-99F Datasheet - United Monolithic Semiconductors

CHK8013-99F 14W Power Transistor

The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrat.

CHK8013-99F Features

* Wide band capability up to 10GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VD up to 30V

* Chip size: 0.9x1.2x0.1mm

* RoHS N°2011/65

* REACh N°1907/2006 Main Electrical Characteristics Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VD

CHK8013-99F-UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHK8013-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

867.54 KB

Description:

14w power transistor.

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