Description
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor.
Features
- Wide band capability up to 6GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VDS up to 50V.
- Chip size: 1.05x1.55x0.1mm.
- RoHS N°2011/65.
- REACh N°1907/2006
Main Electrical Characteristics
Tref = +25°C, CW mode, Freq = 6GHz, VDS = 50V, ID_Q = 100mA
Symbol
Parameter
Min Typ
GSS
Small Signal Gain
14
PSAT
Saturated Output Power
20
PAE
Max Power Added Efficiency
60
GPAE_MAX Associated Gain at Max PAE
10
These values.
CHK8101a99F-UnitedMonolithicSemiconductors.pdf
