CHK8101a99F Datasheet (United Monolithic Semiconductors)

CHK8101a99F, 20W Power Bar

The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.

It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is comp

CHK8101a99F Features

* Wide band capability up to 6GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VDS up to 50V

* Chip size: 1.05x1.55x0.1mm

* RoHS N°2011/65

* REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 6GHz, VDS =