CHK8101a99F 20W Power Bar

United Monolithic Semiconductors

Description

CHK8101a99F 20W Power Bar GaN HEMT on SiC .
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor.

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Datasheet Specifications

Part number: CHK8101a99F
Manufacturer: United Monolithic Semiconductors
File Size: 547.51 KB
Datasheet: CHK8101a99F-UnitedMonolithicSemiconductors.pdf
Description: 20W Power Bar

Features

* Wide band capability up to 6GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VDS up to 50V
* Chip size: 1.05x1.55x0.1mm
* RoHS N°2011/65
* REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 6GHz, VDS =

Applications

* such as radar and telecommunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006 It is proposed in a bare die form and requires an external matching circuitry.

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CHK8101a99F 20W Power Bar United Monolithic Semiconductors

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