CHK8101a99F

20W Power Bar

United Monolithic Semiconductors

CHK8101a99F Features

* Wide band capability up to 6GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VDS up to 50V

* Chip size: 1.05x1.55x0.1mm

* RoHS N°2011/65

* REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 6GHz, VDS =

CHK8101a99F General Description

The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is comp.

CHK8101a99F Datasheet (547.51 KB)

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Datasheet Details

Part number:

CHK8101a99F

Manufacturer:

United Monolithic Semiconductors

File Size:

547.51 KB

Description:

20w power bar.

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CHK8101a99F 20W Power Bar United Monolithic Semiconductors

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CHK8101a99F Features

CHK8101a99F General Description

Datasheet Details

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