CHKA011aSXA 130W Power Packaged Transistor

United Monolithic Semiconductors

Description

CHKA011aSXA Pout (W) & PAE (%) @ 32dBm Gain (dB) @ 32dBm 130W Power Packaged Transistor GaN HEMT on SiC packaged .
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

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Datasheet Specifications

Part number: CHKA011aSXA
Manufacturer: United Monolithic Semiconductors
File Size: 772.22 KB
Datasheet: CHKA011aSXA-UnitedMonolithicSemiconductors.pdf
Description: 130W Power Packaged Transistor

Features

* Wide band capability: up to 1.5GHz
* Pulsed and CW operating modes
* High power: > 130W
* High Efficiency: > 70%
* DC bias: Vd = 50Volt @ Id = 640mA
* Package: Ceramic-Metal
* MTTF > 106 hours @ Tj = 200°C VDS = 50V, ID_Q = 640mA, Pin=32dBm Pulsed mode (25µs, 10%) 170

Applications

* It is well suited for multi-purpose applications such as radar and telecommunication. The CHKA011aSXA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N

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CHKA011aSXA 130W Power Packaged Transistor United Monolithic Semiconductors

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