CHKA011aSXA Datasheet (United Monolithic Semiconductors)

CHKA011aSXA, 130W Power Packaged Transistor

The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

It offers general purpose and broadband solutions for a variety of RF power applications.

It is well suited for multi-purpose applications such as radar and telecommunication.

The CHKA011aSXA is developed on

CHKA011aSXA Features

* Wide band capability: up to 1.5GHz

* Pulsed and CW operating modes

* High power: > 130W

* High Efficiency: > 70%

* DC bias: Vd = 50Volt @ Id = 640mA

* Package: Ceramic-Metal

* MTTF > 106 hours @ Tj = 200°C VDS = 50V, ID_Q = 640mA, Pin=32dBm Pulsed mode (25µs, 10%) 170