Description
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
Features
- Wide band capability: up to 1.5GHz.
- Pulsed and CW operating modes.
- High power: > 130W.
- High Efficiency: > 70%.
- DC bias: Vd = 50Volt @ Id = 640mA.
- Package: Ceramic-Metal.
- MTTF > 106 hours @ Tj = 200°C
VDS = 50V, ID_Q = 640mA, Pin=32dBm Pulsed mode (25µs, 10%)
170
22.5
160
Pout
22
150
21.5
140
21
130
Gain
20.5
120
20
110
19.5
100
19
90
18.5
80
PAE
18
70
17.5
60
17
0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48
Frequency (GHz)
Main Ele.
CHKA011aSXA-UnitedMonolithicSemiconductors.pdf
