CHKA011aSXA Datasheet - United Monolithic Semiconductors

CHKA011aSXA 130W Power Packaged Transistor

The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHKA011aSXA is developed on .

CHKA011aSXA Features

* Wide band capability: up to 1.5GHz

* Pulsed and CW operating modes

* High power: > 130W

* High Efficiency: > 70%

* DC bias: Vd = 50Volt @ Id = 640mA

* Package: Ceramic-Metal

* MTTF > 106 hours @ Tj = 200°C VDS = 50V, ID_Q = 640mA, Pin=32dBm Pulsed mode (25µs, 10%) 170

CHKA011aSXA-UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHKA011aSXA

Manufacturer:

United Monolithic Semiconductors

File Size:

772.22 KB

Description:

130w power packaged transistor.

CHKA011aSXA Distributor

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CHKA011aSXA CHKA011aSXA 130W Power Packaged Transistor United Monolithic Semiconductors