CHKA012a99F Datasheet - United Monolithic Semiconductors

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CHKA012a99F 140W Power Bar

CHKA012a99F 140W Power Bar GaN HEMT on SiC .
The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor.

CHKA012a99F-UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHKA012a99F

Manufacturer:

United Monolithic Semiconductors

File Size:

516.05 KB

Description:

140W Power Bar

Features

* Wide band capability up to 4GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VDS up to 50V
* Chip size: 1x4.84x0.1mm
* RoHS N°2011/65
* REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 3GHz, VDS = 50V

Applications

* such as radar and telecommunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006 It is proposed in a bare die form and requires an external matching circuitry.

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CHKA012a99F 140W Power Bar United Monolithic Semiconductors

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