Part number:
CHKA012a99F
Manufacturer:
United Monolithic Semiconductors
File Size:
516.05 KB
Description:
140w power bar.
CHKA012a99F-UnitedMonolithicSemiconductors.pdf
Datasheet Details
Part number:
CHKA012a99F
Manufacturer:
United Monolithic Semiconductors
File Size:
516.05 KB
Description:
140w power bar.
CHKA012a99F, 140W Power Bar
The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.
It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is com
CHKA012a99F Features
* Wide band capability up to 4GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VDS up to 50V
* Chip size: 1x4.84x0.1mm
* RoHS N°2011/65
* REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 3GHz, VDS = 50V
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