CHK9014-99F Datasheet - United Monolithic Semiconductors

CHK9014-99F 55W Power Transistor

The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrat.

CHK9014-99F Features

* Wide band capability up to 13GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VD up to 30V

* Chip size: 0.88x4.27x0.1mm

* RoHS N°2011/65

* REACh N°1907/2006 Main Electrical Characteristics Tref= +25°C, Pulsed mode, Freq=12GHz, VDS=

CHK9014-99F Datasheet (840.33 KB)

CHK9014-99F Datasheet Preview — Preview of CHK9014-99F PDF

Datasheet Details

Part number:

CHK9014-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

840.33 KB

Description:

55w power transistor.

📁 Related Datasheet

CHK015A-QIA 15W Power Packaged Transistor (United Monolithic Semiconductors)

CHK015AaQIA 15W Power Packaged Transistor (United Monolithic Semiconductors)

CHK0501 Li-ion battery charging chip (CHK)

CHK0501 Rechargeable lithium-chip IT (Infinitrue)

CHK0501A Li-ion battery charging chip (CHK)

CHK8013-99F 14W Power Transistor (United Monolithic Semiconductors)

CHK8015-99F 16W Power Transistor (United Monolithic Semiconductors)

CHK8101a99F 20W Power Bar (United Monolithic Semiconductors)

TAGS

CHK9014-99F 55W Power Transistor United Monolithic Semiconductors

CHK9014-99F Distributor