CHK9014-99F Datasheet (United Monolithic Semiconductors)

CHK9014-99F, 55W Power Transistor

The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.

The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrat

CHK9014-99F Features

* Wide band capability up to 13GHz

* Pulsed and CW operating modes

* GaN technology: High Pout & High PAE

* DC bias: VD up to 30V

* Chip size: 0.88x4.27x0.1mm

* RoHS N°2011/65

* REACh N°1907/2006 Main Electrical Characteristics Tref= +25°C, Pulsed mode, Freq=12GHz, VDS=