CHK8015-99F - 16W Power Transistor

United Monolithic Semiconductors

Datasheet Details

The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor..

Wide band capability up to 18GHz.
Pulsed and CW operating modes.
GaN technology: High Pout & High PAE.
DC bias: VD=30V @ID_Q=200mA.
Chip size 0.88x2x0.1mm.
RoHS N°2011/65.
REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA Symbol Parameter Min Typ GSS Small Signal Gain 17 PSAT Saturated Output Power 20 PAE Max Power Added Efficiency 68 GPAE_MAX Associated Gain at Max PAE 11 These value.

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