CHK8015-99F Datasheet | United Monolithic Semiconductors

16W Power Transistor GaN HEMT on SiC Description The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die form and requires an external matching circuitry. Main Features - Wide band capability up to 18GHz - Pulsed and CW operating modes - GaN technology: High Pout & High PAE - DC bias: VD=30V @ID_Q=200mA - Chip size 0.88x2x0.1mm - RoHS N°2011/65 - REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS =...