CHK8015-99F transistor equivalent, 16w power transistor.
* Wide band capability up to 18GHz
* Pulsed and CW operating modes
* GaN technology: High Pout & High PAE
* DC bias: VD=30V @ID_Q=200mA
* Chip size 0..
The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.
It is proposed in a bare di.
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