Datasheet Details
| Part number | CHK8015-99F |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 328.05 KB |
| Description | 16W Power Transistor |
| Datasheet |
 CHK8015-99F Datasheet
|
|
|
General Description
The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications.
The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.
Key Features
- Wide band capability up to 18GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VD=30V @ID_Q=200mA.
- Chip size 0.88x2x0.1mm.
- RoHS N°2011/65.
- REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA Symbol Parameter Min Typ GSS Small Signal Gain 17 PSAT Saturated Output Power 20 PAE Max Power Added Efficiency 68 GPAE_MAX Associated Gain at Max PAE 11 These value.