CHKA011aSXA transistor equivalent, 130w power packaged transistor.
* Wide band capability: up to 1.5GHz
* Pulsed and CW operating modes
* High power: > 130W
* High Efficiency: > 70%
* DC bias: Vd = 50Volt @ Id = 640mA.
It is well suited for multi-purpose applications such as radar and telecommunication. The CHKA011aSXA is developed on a.
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and t.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 772.22KB)