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CHS5105-QAG - DC-4GHz Reflective SPDT

General Description

The CHS5105-QAG is a monolithic FET based reflective switch.

It is designed for a wide range of applications, from military to commercial systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performance: DC-4GHz.
  • Low insertion loss: 0.7dB.
  • Isolation: 40dB.
  • Return loss: 16dB.
  • Input P1dB: 30dBm.
  • QAG-QFN3x3.
  • MSL1 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range IL On state insertion loss ISOL Off state isolation RL On state return loss IP1dB Input Power @1dB gain compression Min Typ Max Unit DC 4 GHz 0.7 dB 40 dB 16 dB 30 dBm Ref. : DSCHS5105-QAG0301 - 27 Oct 20 1/12 Specifications s.

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Datasheet Details

Part number CHS5105-QAG
Manufacturer United Monolithic Semiconductors
File Size 775.33 KB
Description DC-4GHz Reflective SPDT
Datasheet download datasheet CHS5105-QAG Datasheet

Full PDF Text Transcription (Reference)

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CHS5105-QAG DC-4GHz Reflective SPDT GaAs Monolithic Microwave IC in SMD leadless package Description The CHS5105-QAG is a monolithic FET based reflective switch. It is designed for a wide range of applications, from military to commercial systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. NC GND RF2 NC 16 15 14 13 GND 1 RF IN 2 GND 3 NC 4 5 6 78 12 B 11 NC 10 NC 9A NC GND RF1 NC Main Features ■ Broadband performance: DC-4GHz ■ Low insertion loss: 0.7dB ■ Isolation: 40dB ■ Return loss: 16dB ■ Input P1dB: 30dBm ■ QAG-QFN3x3 ■ MSL1 Main Electrical Characteristics Tamb.