CHZ015AaQEG Datasheet, Driver, United Monolithic Semiconductors

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CHZ015AaQEG Features and benefits

* Wide band capability: 1.2 - 1.4GHz
* Pulsed operating mode
* High power: > 15W
* High PAE: up to 60%
* DC bias: VDS=45V @ I D_Q=100mA
* Low cost.

CHZ015AaQEG Application

in L-band. The circuit is well suited for pulsed radar application. The CHZ015AaQEG is proposed on a 0.5µm gate length G.

CHZ015AaQEG Description

The CHZ015AaQEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015AaQEG i.

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