CHZ180A-SEB Datasheet (United Monolithic Semiconductors)

CHZ180A-SEB, 180W L-Band HPA

The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180A-SEB is proposed on a 0.5µm gate length Ga

CHZ180A-SEB Features

* Wide band capability: 1.2

* 1.4GHz

* Pulsed operating mode

* High power: > 180W

* High PAE: up to 53%

* DC bias: VDS = 45V @ ID_Q = 1.3A

* MTTF > 106 hours @ Tj = 200°C

* RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) Power Gain (dB) VDS = 45V, ID_Q