Datasheet Details
| Part number | CHZ015A-QEG |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 969.67 KB |
| Description | 15W L-Band Driver |
| Datasheet |
 CHZ015A-QEG Datasheet
|
|
|
General Description
The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor.
It allows broadband solutions for a variety of RF power applications in L-band.
The circuit is well suited for pulsed radar application.
Key Features
- Wide band capability: 1.2 - 1.4GHz.
- Pulsed operating mode.
- High power: > 15W.
- High PAE: up to 55%.
- DC bias: VDS=45V @ I D_Q=100mA.
- Low cost package: 24L-QFN4x5.
- MTTF > 106 hours @ Tj=200°C VDS = 45V, ID_Q = 100mA, Pin = 28dBm Pulsed mode (25µs-10%) Performances on the connector access planes Main Electrical Characteristics Tamb. = +25°C, pulsed mode Symbol Parameter Freq Frequency range GSS POUT PAE Small Signal Gain Output Power Max Power Added Effici.