CHZ180AaSEB hpa equivalent, 180w l-band hpa.
* Wide band capability: up to 1.5GHz
* Pulsed operating mode
* High power: > 180W
* High Efficiency
* DC bias: VDS = 45V @ ID_Q = 1.3A
* Package: .
in L-band. It is well suited for pulsed radar application. The CHZ180AaSEB is proposed on a 0.5µm gate length GaN HEMT p.
The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The.
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