UF3SC120016K3S Datasheet | UnitedSiC

Description This Si C FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with remended RC-snubbers, and any application requiring standard gate drive. Features w Typical on-resistance RDS(on),typ of 16m W w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Part Number UF3SC120016K3S Package TO-247-3L Marking UF3SC120016K3S Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3SC120016K3S Rev. B, December 2019 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Symbol VDS VGS IDM EAS Ptot TJ,max TJ, TSTG Test Conditions DC TC = 25°C TC = 100°C TC = 25°C L=15m H, IAS =6.6A TC = 25°C Value 1200 -20 to +20 107 77 350 327 517 175 -55 to 175 Units V V A A A m J W °C °C °C Thermal Characteristics Parameter Thermal resistance, junction-to-case Symbol Rq JC Test Conditions Min Value Typ Max Units 0.22 0.29 °C/W Datasheet: UF3SC120016K3S Rev. B, December 2019 Electrical...