Datasheet Details
| Part number | UF3SC065030D8S |
|---|---|
| Manufacturer | UnitedSiC |
| File Size | 438.99 KB |
| Description | MOSFET |
| Datasheet | UF3SC065030D8S-UnitedSiC.pdf |
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Overview: 650V-34mW SiC FET DATASHEET UF3SC065030D8S 1 G (1) 4 32 1 KS (2) D (TAB) S (3,4) Rev.
| Part number | UF3SC065030D8S |
|---|---|
| Manufacturer | UnitedSiC |
| File Size | 438.99 KB |
| Description | MOSFET |
| Datasheet | UF3SC065030D8S-UnitedSiC.pdf |
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This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.
Available in the DFN8X8-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.
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