UF3SC065030D8S Datasheet | UnitedSiC

650V-34mW SiC FET 1 G (1) 4 32 1 KS (2) D (TAB) S (3,4) Rev. B, January 2020 Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the DFN8X8-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive. Features w Typical...