UF3SC120016K3S Datasheet | UnitedSiC

CASE CASE D (2) G (1) 1 23 S (3) 1200V-16mW SiC FET Rev. B, December 2019 Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with remended RC-snubbers, and any application requiring...