Datasheet Details
| Part number | UF3SC120016K3S |
|---|---|
| Manufacturer | UnitedSiC |
| File Size | 548.45 KB |
| Description | MOSFET |
| Datasheet |
 UF3SC120016K3S Datasheet
|
|
|
General Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Key Features
- w Typical on-resistance RDS(on),typ of 16mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Part Number UF3SC120016K3S Package TO-247-3L Marking UF3SC120016K3S Typical.