logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

80N10 VBsemi

80N10 N-Channel MOSFET

80N10 Avg. rating / M : star-13

datasheet Download

80N10 Datasheet

Features and benefits


• TrenchFET® Power MOSFET
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAX.

Image gallery

80N10 80N10 80N10

TAGS
80N10
N-Channel
MOSFET
80N02
80N03
80N03L
VBsemi
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy