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K22E10N1 Datasheet, MOSFET, VBsemi

K22E10N1 Datasheet, MOSFET, VBsemi

K22E10N1

datasheet Download (Size : 259.00KB)

K22E10N1 Datasheet
K22E10N1

datasheet Download (Size : 259.00KB)

K22E10N1 Datasheet

K22E10N1 Features and benefits

K22E10N1 Features and benefits


* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAX.

K22E10N1 Description

K22E10N1 Description

N-Channel 100V MOSFET

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K22E10N1 Page 1 K22E10N1 Page 2 K22E10N1 Page 3

TAGS

K22E10N1
N-Channel
100V
MOSFET
VBsemi

Manufacturer


VBsemi

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