logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

VBZFB40N10 VBsemi

VBZFB40N10 N-Channel MOSFET

VBZFB40N10 Avg. rating / M : star-13

datasheet Download

VBZFB40N10 Datasheet

Features and benefits


• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• .

Application


• Primary Side Switch GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise no.

Image gallery

VBZFB40N10 VBZFB40N10 VBZFB40N10

TAGS
VBZFB40N10
N-Channel
MOSFET
VBZFB40N06
VBZFB20P06
VBZFB60N03
VBsemi
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy